AT28BV256 |
RFQ for AT28BV256 Required Field |
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| Technical/Catalog Information | AT28BV256-20JA |
| Vendor | Atmel |
| Category | Integrated Circuits (ICs) |
| Memory Type | EEPROM |
| Memory Size | 256K (32K x 8) |
| Speed | 200ns |
| Interface | Parallel |
| Package / Case | 32-PLCC |
| Packaging | Tube |
| Voltage - Supply | 2.7 V ~ 3.6 V |
| Operating Temperature | -40°C ~ 125°C |
| Format - Memory | EEPROMs - Parallel |
| Drawing Number | * |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | AT28BV256 20JA AT28BV25620JA |
| Product | Manufacturers | Pack | D/C |
| AT28BV256 | Atmel | - | 05/06+ |
The AT28BV256 is a high-performance Electrically Erasable and Programmable Read Only Memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel's advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of just 54 mW. When the device is deselected, the CMOS standby current is less than 200 µA.
Features |
| • Single 2.7V - 3.6V Supply• Fast Read Access Time 200 ns• Automatic Page Write Operation Internal Address and Data Latches for 64 Bytes Internal Control Timer• Fast Write Cycle Times Page Write Cycle Time: 10 ms Maximum 1- to 64-byte Page Write Operation• Low Power Dissipation 15 mA Active Current 20 µA CMOS Standby Current• Hardware and Software Data Protection•DATA Polling for End of Write Detection • High Reliability CMOS Technology Endurance: 10,000 Cycles Data Retention: 10 Years• JEDEC Approved Byte-wide Pinout• Commercial and Industrial Temperature Ranges |
